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Infineon Technologies IPP139N08N3GXKSA1
Infineon Technologies

Infineon IPP139N08N3GXKSA1 OptiMOS 3 N-Channel MOSFET, 80 V

MPNIPP139N08N3GXKSA1
End of Life

Infineon OptiMOS™ 3 N-Channel Power MOSFET, 80 V Vdss, 45 A continuous drain, 13.9 mOhm Rds(on) at 10 V, 25 nC gate charge, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$0.56Ref. price · indicative, final on quote
IPP139N08N3GXKSA1 datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPP139N08N3GXKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™ 3
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C45A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 33µA
Rds on (Max) @ id, vgs13.9mOhm @ 45A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1730 pF @ 40 V

Product details

80 V, 45 A N-channel — the BOM-fit check

The Infineon IPP139N08N3GXKSA1 is an OptiMOS™ 3 N-channel power MOSFET in a TO-220-3 through-hole package.

On-resistance and gate drive — the efficiency pair

At 45 A the I²R loss is about 28 W at the rated Rds(on), which sets the minimum heatsink requirement — the 79 W power dissipation ceiling at case temperature gives some headroom for switching losses. Gate charge is 25 nC at 10 V. For a 100 kHz switching frequency the gate-drive current needed is about 2.5 mA average, well within a standard MOSFET driver's capability. The 6 V minimum drive voltage for the rated Rds(on) means a 5 V logic gate drive will not fully enhance the channel — budget a 10 V rail or a driver with bootstrap.

Temperature range and package — industrial and automotive floor

The 175°C maximum allows operation in high-ambient environments such as engine-bay electronics or sealed industrial enclosures without forced air, provided the thermal resistance from junction to case (RthJC) is managed with adequate heatsinking.

It is ROHS3 compliant. No official second-source or pin-compatible cross-reference is listed in the Infineon OptiMOS™ 3 family for this specific Rds(on) tier.

Frequently asked questions

Can I replace IPP139N08N3GXKSA1 with IRFZ44N?

The IRFZ44N is a 55 V, 49 A N-channel MOSFET in a TO-220 package. The IPP139N08N3GXKSA1 has a higher 80 V drain-source rating and a lower 13.9 mOhm Rds(on) at 10 V. A direct replacement depends on whether the 55 V rating of the IRFZ44N provides sufficient voltage margin for the application — it is not a pin-compatible substitute without a design review.