100 V, 12.9 mOhm — what the Rds(on) means for the switching loop
The Infineon IPP129N10NF2SAKMA1 is a 100 V N-channel MOSFET from the StrongIRFET™ 2 series, built on a trench technology rated for >=100 V. In the TO-220-3 through-hole package, it delivers a continuous drain current of 52 A at the case (Tc) and 12 A at 25°C ambient (Ta). The max Rds(on) of 12.9 mOhm is specified at 30 A with a 10 V gate drive, which is the typical operating point for a hard-switched converter or motor-drive output stage. Gate charge comes in at 28 nC at 10 V — moderate enough that a standard gate driver (1–2 A peak) can switch it in the 20–50 kHz range without excessive crossover loss. The junction temperature range extends to 175°C, giving headroom for thermally constrained layouts or high-ambient enclosures.
Active lifecycle and sourcing posture
The IPP129N10NF2SAKMA1 carries an Active product status and is ROHS3 compliant.
Package and thermal considerations
Mounted in the PG-TO220-3 through-hole package, the part dissipates up to 71 W at the case (Tc) and 3.8 W at ambient (Ta). The TO-220 tab is the primary heat path — a heatsink or chassis mount is expected for continuous operation above a few amps. The 175°C junction rating means the die can tolerate brief overloads or high ambient temperatures common in industrial motor drives, power supplies, and automotive auxiliary loads. Input capacitance is 1300 pF at 50 V Vds, which keeps the gate-drive energy per cycle low and supports clean switching with minimal snubber.