Infineon OptiMOS IPP120N08S403AKSA1, N-Channel MOSFET, 80 V Vds, 120 A Id, 2.8 mOhm Rds(on) max @ 100 A / 10 V, 167 nC Qg, PG-TO220-3-1, -55 to 175 °C, AEC-Q101.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 278W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 223µA |
| Rds on (Max) @ id, vgs | 2.8mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 167 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 11550 pF @ 25 V |
The IPP120N08S403AKSA1: Total gate charge is 167 nC at 10 V, input capacitance is 11550 pF at 25 V drain-source.
The PG-TO220-3-1 package is a through-hole mount with a metal tab for heatsink attachment. Maximum power dissipation is 278 W at the case temperature.
It is ROHS3 compliant.
This is the value used for conduction-loss calculations in the BOM.
Total gate charge is 167 nC at a 10 V gate-source voltage.