Infineon OptiMOS™ N-Channel MOSFET, 40 V Vdss, 120 A continuous drain, 2.1 mOhm Rds(on) at 10 V, 134 nC gate charge, TO-220-3 through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 158W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 110µA |
| Rds on (Max) @ id, vgs | 2.1mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 134 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 10740 pF @ 25 V |
The IPP120N04S402AKSA1: Total gate charge is 134 nC at 10 V. Input capacitance is 10740 pF at 25 V drain bias.
The 158 W maximum power dissipation at case temperature assumes an infinite heatsink; real-world derating follows the datasheet's thermal impedance curve. The TO-220-3 through-hole package (PG-TO220-3-1) allows bolting to a chassis or heatsink with a thermal pad or grease.
Engineers need to validate electrical and mechanical fit before design-in.
Buyers need to find stock and place an order quickly to avoid production delays.
Sourcing decisions depend on cost competitiveness within budget constraints.
Immediate availability affects lead time and project scheduling.
Cross-referencing is critical when the exact part is unavailable or obsolete.
Quick spec check helps engineers confirm suitability for the application.