40 V, 120 A, 2.3 mOhm — the OptiMOS workhorse in TO-220
The Infineon IPP120N04S3-02 is an N-channel enhancement-mode MOSFET from the OptiMOS® family, built for high-current switching in 12 V, 24 V, and 48 V rails.
Gate charge is 210 nC at 10 V. Input capacitance is 14300 pF at 25 V drain bias.
Thermal and mechanical — field-swappable through-hole
The TO-220-3 package (PG-TO220-3-1) with through-hole mounting is a field-repair favourite — no reflow oven needed, just a soldering iron and a clean pad. Maximum power dissipation is 300 W at case temperature, but that assumes an infinite heatsink. The ±20 V maximum gate-source rating gives some margin against gate ringing in hard-switching topologies.
Lifecycle and supply — active, no end-of-life pressure
ROHS3 compliant.
