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Infineon Technologies IPP120N04S3-02 — Discrete Semiconductors

Infineon IPP120N04S3-02 OptiMOS N-Ch MOSFET, 40V 120A

MPNIPP120N04S3-02
End of Life

Infineon OptiMOS® N-Channel MOSFET, IPP120N04S3-02, 40 V drain-source, 120 A continuous drain, 2.3 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C operating junction temperature.

$2.95Ref. price · indicative, final on quote
Infineon Technologies IPP120N04S3-02 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesOptiMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPP120N04S3-02 specifications
ParameterValue
SeriesOptiMOS®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 230µA
Rds on (Max) @ id, vgs2.3mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs210 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds14300 pF @ 25 V

Product details

40 V, 120 A, 2.3 mOhm — the OptiMOS workhorse in TO-220

The Infineon IPP120N04S3-02 is an N-channel enhancement-mode MOSFET from the OptiMOS® family, built for high-current switching in 12 V, 24 V, and 48 V rails.

Gate charge is 210 nC at 10 V.

Thermal and mechanical — field-swappable through-hole

The TO-220-3 package (PG-TO220-3-1) with through-hole mounting is a field-repair favourite — no reflow oven needed, just a soldering iron and a clean pad. Maximum power dissipation is 300 W at case temperature, but that assumes an infinite heatsink.

Lifecycle and supply — active, no end-of-life pressure

ROHS3 compliant.

Frequently asked questions

What are the critical electrical specs of IPP120N04S3-02?

Gate charge is 210 nC at 10 V, and input capacitance is 14300 pF at 25 V drain bias.