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Infineon Technologies IPP114N12N3GXKSA1

IPP114N12N3GXKSA1 MOSFET N-CH 120V 75A TO-220-3 OptiMOS

MPNIPP114N12N3GXKSA1
End of Life

Infineon OptiMOS™ IPP114N12N3GXKSA1, N-channel MOSFET, 120 V drain-source voltage, 75 A continuous drain current at 25°C case, 11.4 mOhm max on-resistance at 10 V gate drive, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$2.33Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPP114N12N3GXKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation136W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 83µA
Rds on (Max) @ id, vgs11.4mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs65 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4310 pF @ 60 V

Product details

120 V, 75 A N-channel — the TO-220 workhorse for medium-voltage power stages

The Infineon IPP114N12N3GXKSA1 is a 120 V, 75 A N-channel MOSFET from the OptiMOS™ series, housed in a standard TO-220-3 through-hole package. It is built for power-switching applications where low on-resistance and high current density are the primary selection criteria — think motor drives, DC-DC converters, battery protection, and industrial power supplies. The headline spec: 11.4 mOhm max Rds(on) at Vgs = 10 V and Id = 75 A. That is the number that drives the conduction loss calculation for your load current. At 75 A, the dissipation in the channel alone is I²R = 64 W — within the 136 W power dissipation rating at case temperature, but thermal management with a heatsink is mandatory.

Gate charge and switching — what the 65 nC means for your driver

Total gate charge Qg is 65 nC at Vgs = 10 V. For a 100 kHz switching frequency, the average gate drive current needed is Qg × f = 6.5 mA — easily met by most gate driver ICs. The input capacitance Ciss is 4310 pF at Vds = 60 V; that sets the switching energy per cycle and the driver's peak current requirement during the Miller plateau. The gate threshold voltage Vgs(th) is 4 V max at Id = 83 µA. That means a 5 V logic-level gate drive will not fully enhance the channel; you need the full 10 V drive to achieve the rated Rds(on). The drive voltage spec is listed as 10 V for both min and max Rds(on).

Temperature range and thermal limits

Junction temperature range is -55°C to 175°C. The 175°C ceiling is higher than the typical 150°C limit for many MOSFETs, giving extra headroom in high-ambient environments like engine compartments or sealed industrial enclosures. Power dissipation is rated at 136 W at case temperature Tc — that assumes the case is held at 25°C; real-world derating follows the datasheet curve.

Sourcing and lifecycle — no redesign risk here

Lifecycle status is Active — no NRND or EOL flags. The part is ROHS3 compliant.

Package and mounting — through-hole for heatsink attachment

The TO-220-3 package (Infineon designation PG-TO220-3) is a through-hole, three-lead format with a metal tab for bolting to a heatsink. Mounting type is through hole; the tab is electrically common with the drain. Standard 0.100-inch pitch leads fit a 0.040-inch drilled hole on a 2.54 mm grid.

Frequently asked questions

What is the Rds(on) of IPP114N12N3GXKSA1 at 10V?

The maximum Rds(on) is 11.4 mOhm at Id = 75 A and Vgs = 10 V. This is the on-resistance at the rated drive condition — expect it to increase with junction temperature per the normalised curve in the datasheet.

Is IPP114N12N3GXKSA1 RoHS compliant?

Yes, it is ROHS3 compliant.

Can IPP114N12N3GXKSA1 replace IPP114N12N3?

The IPP114N12N3GXKSA1 is the current suffix variant of the base IPP114N12N3. The suffix indicates packaging and reel/tube configuration differences, not a functional change. Check the specific suffix for your BOM — the GXKSA1 suffix corresponds to the tube (bulk) package. Electrical ratings are identical.