120 V, 75 A N-channel — the TO-220 workhorse for medium-voltage power stages
The Infineon IPP114N12N3GXKSA1 is a 120 V, 75 A N-channel MOSFET from the OptiMOS™ series, housed in a standard TO-220-3 through-hole package. It is built for power-switching applications where low on-resistance and high current density are the primary selection criteria — think motor drives, DC-DC converters, battery protection, and industrial power supplies. The headline spec: 11.4 mOhm max Rds(on) at Vgs = 10 V and Id = 75 A. That is the number that drives the conduction loss calculation for your load current.
Gate charge and switching — what the 65 nC means for your driver
Total gate charge Qg is 65 nC at Vgs = 10 V. The input capacitance Ciss is 4310 pF at Vds = 60 V; that sets the switching energy per cycle and the driver's peak current requirement during the Miller plateau. The gate threshold voltage Vgs(th) is 4 V max at Id = 83 µA. The drive voltage spec is listed as 10 V for both min and max Rds(on).
Temperature range and thermal limits
The 175°C ceiling is higher than the typical 150°C limit for many MOSFETs, giving extra headroom in high-ambient environments like engine compartments or sealed industrial enclosures.
Sourcing and lifecycle — no redesign risk here
Lifecycle status is Active — no NRND or EOL flags. The part is ROHS3 compliant.
Package and mounting — through-hole for heatsink attachment
The TO-220-3 package (Infineon designation PG-TO220-3) is a through-hole, three-lead format with a metal tab for bolting to a heatsink. Mounting type is through hole; the tab is electrically common with the drain. Standard 0.100-inch pitch leads fit a 0.040-inch drilled hole on a 2.54 mm grid.