Infineon OptiMOS™ 3 IPP114N03LGHKSA1 N-channel power MOSFET, 30 V drain-source voltage, 30 A continuous drain current, 11.4 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ 3 |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 38W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 11.4mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1500 pF @ 15 V |
The IPP114N03LGHKSA1: Total gate charge is 14 nC at 10 V gate drive. The drive voltage range for rated Rds(on) is 4.5 V to 10 V.
Operating junction temperature spans -55 °C to 175 °C. The 38 W power dissipation at case temperature is the thermal ceiling.
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