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Infineon Technologies IPP114N03LG
Infineon Technologies

Infineon IPP114N03LG N-Channel Power MOSFET, 30V 30A TO-220

MPNIPP114N03LG
End of Life

Infineon OptiMOS™ IPP114N03LG, N-Channel Power MOSFET, 30 V Vdss, 30 A Id, 11.4 mOhm Rds(on) @ 30 A 10 V, 14 nC Qg, TO-220-3, -55°C to 175°C.

$0.4Ref. price · indicative, final on quote
IPP114N03LG datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPP114N03LG Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation38W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs11.4mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 15 V

Product details

11.4 mOhm Rds(on) at 30 A — where the conduction loss lands

The Infineon IPP114N03LG is an OptiMOS™ N-channel power MOSFET in a TO-220-3 through-hole package. At 30 A load, Rds(on) is 11.4 mOhm, and the package power dissipation limit is 38 W.

Gate charge and switching — sizing the driver

Total gate charge is 14 nC at Vgs=10 V. Input capacitance Ciss is 1500 pF at Vds=15 V.

The TO-220 package with a PG-TO220-3 suffix mates with clip-on or screw-mount heatsinks. The 38 W dissipation ceiling is the hard limit.

Frequently asked questions

Is IPP114N03LG RoHS compliant?

Yes, it is ROHS3 compliant per the Infineon listing.