Infineon OptiMOS N-Channel MOSFET, 150 V Vdss, 83 A continuous drain, 11.1 mOhm Rds(on) max at 10 V, 55 nC gate charge, TO-220-3 through-hole package, -55 to 175 °C junction.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 8V, 10V |
| Current - continuous drain (Id) @ 25°C | 83A (Tc) |
| Power dissipation | 214W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 160µA |
| Rds on (Max) @ id, vgs | 11.1mOhm @ 83A, 10V |
| Gate charge (Qg) (Max) @ vgs | 55 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3230 pF @ 75 V |
The IPP111N15N3GXKSA1 total gate charge is 55 nC at 10 V gate drive. Input capacitance is 3230 pF at 75 V drain-source.
Junction temperature range is -55 °C to 175 °C. Threshold voltage is 4 V max at 160 µA drain current.
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