Infineon OptimWatt™ IPP110N20NAAKSA1, N-Channel MOSFET, 200 V Vdss, 88 A Id, 10.7 mOhm Rds(on) max at 10 V, 87 nC Qg, TO-220-3 through-hole, -55 to 175 °C junction.
| Parameter | Value |
|---|---|
| Series | OptimWatt™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 88A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 270µA |
| Rds on (Max) @ id, vgs | 10.7mOhm @ 88A, 10V |
| Gate charge (Qg) (Max) @ vgs | 87 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7100 pF @ 100 V |
Gate charge totals 87 nC at 10 V.
The through-hole TO-220 package is widely stocked and easy to hand-solder or socket in a repair scenario.
The maximum on-resistance is 10.7 mOhm at 88 A drain current with a 10 V gate-to-source drive. That figure is the worst-case across the operating temperature range; typical values at 25°C are lower.
Total gate charge (Qg) is 87 nC maximum at a 10 V gate drive. This is the charge the gate driver must deliver to turn the MOSFET fully on; it sets the switching speed and driver dissipation.