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Infineon Technologies IPP110N20NAAKSA1
Infineon Technologies

Infineon IPP110N20NAAKSA1 MOSFET, N-Ch 200V 88A TO-220-3

MPNIPP110N20NAAKSA1
End of Life

Infineon OptimWatt™ IPP110N20NAAKSA1, N-Channel MOSFET, 200 V Vdss, 88 A Id, 10.7 mOhm Rds(on) max at 10 V, 87 nC Qg, TO-220-3 through-hole, -55 to 175 °C junction.

$10.74Ref. price · indicative, final on quote
IPP110N20NAAKSA1 datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPP110N20NAAKSA1 Technical Specifications
ParameterValue
SeriesOptimWatt™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C88A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs10.7mOhm @ 88A, 10V
Gate charge (Qg) (Max) @ vgs87 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7100 pF @ 100 V

Product details

200 V, 88 A, TO-220-3 — the workhorse power switch

The IPP110N20NAAKSA1: It comes in a through-hole TO-220-3 package (PG-TO220-3), the standard three-lead power package that bolts to a heatsink or chassis and swaps with a screwdriver on site — no hot-air station needed.

On-resistance and gate charge — the switching budget

Gate charge totals 87 nC at 10 V.

175°C junction — industrial and harsh environments

The 300 W power dissipation rating at case temperature is achievable with an aggressive heatsink.

Active production and compliance

The through-hole TO-220 package is widely stocked and easy to hand-solder or socket in a repair scenario.

Frequently asked questions

What is the Rds(on) of IPP110N20NAAKSA1?

The maximum on-resistance is 10.7 mOhm at 88 A drain current with a 10 V gate-to-source drive. That figure is the worst-case across the operating temperature range; typical values at 25°C are lower.

What is the gate charge of IPP110N20NAAKSA1?

Total gate charge (Qg) is 87 nC maximum at a 10 V gate drive. This is the charge the gate driver must deliver to turn the MOSFET fully on; it sets the switching speed and driver dissipation.