Infineon OptiMOS series, N-Channel MOSFET, 200 V Vdss, 88 A continuous drain (Tc), 11 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 88A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 270µA |
| Rds on (Max) @ id, vgs | 11mOhm @ 88A, 10V |
| Gate charge (Qg) (Max) @ vgs | 87 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7100 pF @ 100 V |
Infineon lists this part as Active.
The specified Rds(on) of 11 mOhm is measured at 10 V gate drive with 88 A drain current.
The IPD50R950CEAUMA1 is a different class of part — 500 V, 950 mOhm, surface-mount CoolMOS CE — not a functional equivalent. For a 200 V, 88 A, 11 mOhm through-hole N-channel, stay within the OptiMOS 200 V family. There is no direct pin-compatible second source listed in the Infineon cross-reference for this exact TO-220-3 variant.
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