Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS series, N-Channel MOSFET, 200 V Vdss, 88 A continuous drain (Tc), 11 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 88A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 270µA |
| Rds on (Max) @ id, vgs | 11mOhm @ 88A, 10V |
| Gate charge (Qg) (Max) @ vgs | 87 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7100 pF @ 100 V |
Infineon lists this part as Active.
The specified Rds(on) of 11 mOhm is measured at 10 V gate drive with 88 A drain current.
