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Infineon Technologies IPP100N06S2L05AKSA2

Infineon IPP100N06S2L05AKSA2 N-Channel MOSFET

MPNIPP100N06S2L05AKSA2
End of Life

Infineon OptiMOS N-Channel MOSFET, 55 V drain-source voltage, 100 A continuous drain current, 4.7 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55 to 175 °C junction temperature.

$4.26Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPP100N06S2L05AKSA2 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs4.7mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs230 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5660 pF @ 25 V

Product details

55 V, 100 A — TO-220-3 power switch for PSU and motor drives

The IPP100N06S2L05AKSA2: The TO-220-3 through-hole package (PG-TO220-3-1) allows direct mounting to a heatsink with a screw or clip.

4.7 mOhm Rds(on) — conduction loss floor

Maximum on-resistance is 4.7 mOhm at 80 A drain current with 10 V gate drive. This is the number that sets the I²R heat in the pass element — at 80 A the conduction loss is under 30 W, which the 300 W package power rating (Tc) can handle with adequate heatsinking. The 4.5 V logic-level threshold lets a 5 V PWM signal from a microcontroller or gate driver turn the device fully on, though the 10 V drive delivers the lowest Rds(on).

Gate charge and switching speed

Total gate charge is 230 nC at 10 V. That is a substantial charge — the gate driver must source and sink this per switching cycle. At 50 kHz switching, the average gate current is about 11.5 mA; at 100 kHz it doubles to 23 mA. Pair with a driver rated for at least 2 A peak to keep the Miller plateau short. Input capacitance is 5660 pF at 25 V drain-source, consistent with a large-die device.

175 °C junction — thermal headroom

The 175 °C rating covers hot spots during overload transients in motor stall or short-circuit conditions.

Frequently asked questions

What is the Rds(on) of IPP100N06S2L05AKSA2?

The 4.5 V logic-level threshold allows reduced gate drive, but the lowest Rds(on) is achieved at 10 V.

Is IPP100N06S2L05AKSA2 RoHS compliant?

Yes, it is ROHS3 compliant per the supplier listing.