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Infineon Technologies IPP096N03LGHKSA1

IPP096N03LGHKSA1 - Infineon Technologies

MPNIPP096N03LGHKSA1
End of Life

N-CHANNEL POWER MOSFET

$0.33Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSNot applicable
SeriesOptiMOS™ 3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP096N03LGHKSA1 specifications
ParameterValue
SeriesOptiMOS™ 3
FET typeN-Channel
MountingThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation42W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs9.6mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 15 V

Frequently asked questions

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Does IPP096N03LGHKSA1 have a cross reference to other Infineon MOSFETs?

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