
IPP096N03LGHKSA1 - Infineon Technologies
MPNIPP096N03LGHKSA1
End of Life
N-CHANNEL POWER MOSFET
$0.33Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSNot applicable
SeriesOptiMOS™ 3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ 3 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Tc) |
| Power dissipation | 42W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 9.6mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1600 pF @ 15 V |
Frequently asked questions
What is the datasheet for IPP096N03LGHKSA1?
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