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Infineon Technologies IPP082N10NF2SAKMA1 — DC-DC Power Modules

Infineon IPP082N10NF2SAKMA1 N-Channel MOSFET, 100V, 8.2mΩ

MPNIPP082N10NF2SAKMA1
End of Life

Infineon StrongIRFET™ 2, N-Channel MOSFET, PG-TO220-3, 100 V drain-source, 8.2 mΩ Rds(on) at 10 V, 77 A continuous drain (Tc), 42 nC gate charge, -55°C to 175°C.

$1.97Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

IPP082N10NF2SAKMA1 Technical Specifications
ParameterValue
SeriesStrongIRFET™ 2
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C15A (Ta), 77A (Tc)
Power dissipation3.8W (Ta), 100W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.8V @ 46µA
Rds on (Max) @ id, vgs8.2mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2000 pF @ 50 V

Product details

100 V, 8.2 mΩ — the sweet spot for 48 V and secondary-side switching

The Infineon IPP082N10NF2SAKMA1 is an N-channel MOSFET from the StrongIRFET™ 2 family, built on a trench technology rated for 100 V drain-source. The headline on-resistance is 8.2 mΩ at 10 V gate drive, which puts it in the right bracket for 48 V bus converters, motor-drive bridges, and secondary-side synchronous rectification where conduction loss matters. The package is a standard PG-TO220-3 through-hole — easy to heatsink, common footprint, rugged for industrial assembly. Continuous drain current is rated 15 A at ambient and 77 A at case temperature (Tc), so thermal management is the real limiter; with a decent heatsink the part can handle serious current.

Gate drive and switching — what the numbers mean for your design

The drive voltage range is 6 V to 10 V for achieving the rated Rds(on). At 6 V the on-resistance will be higher than the 8.2 mΩ headline, so check the typical curve if you're running from a 5 V logic gate driver. Gate charge is 42 nC at 10 V — moderate for a 100 V device in this current class; a standard totem-pole driver handles it fine, but don't undersize the gate drive supply if switching above 100 kHz. Input capacitance (Ciss) is 2000 pF at 50 V drain bias, which is manageable and keeps the gate drive losses reasonable.

Temperature range and package — tough enough for industrial and automotive bays

Operating junction temperature spans -55°C to 175°C, which covers under-hood automotive, industrial motor drives, and outdoor telecom enclosures. The PG-TO220-3 package is through-hole, so it's not for dense SMD layouts, but it's a proven workhorse for power stages where thermal vias and heatsink mounting are standard. Power dissipation is rated 3.8 W at ambient and 100 W at case temperature — the case rating is what you design to with a proper heatsink.

Lifecycle and sourcing — active, no obsolescence worry

This part is listed as Active (current production) and ROHS3 compliant. Infineon's StrongIRFET™ 2 series is a mature, widely used trench MOSFET line, so supply is stable through distribution.

Frequently asked questions

What is the Rds(on) of IPP082N10NF2SAKMA1?

The maximum on-resistance is 8.2 mOhm at 50 A drain current with a 10 V gate drive.

Is IPP082N10NF2SAKMA1 RoHS compliant?

Yes, the part is ROHS3 compliant per the lifecycle record.