7.6 mOhm at 56 A — the conduction-loss anchor
The Infineon IPP076N15N5AKSA1 is an OptiMOS™ 5 N-channel power MOSFET in a through-hole TO-220-3 package.
Total gate charge is 21 nC at Vgs = 10 V. A low Qg for a 112 A-class FET means the gate driver sees a smaller capacitive load per cycle, which translates to faster turn-on and turn-off edges and reduced switching losses in a hard-switched topology like a synchronous buck or a half-bridge. Input capacitance Ciss is 4700 pF at Vds = 75 V. That figure, combined with the 21 nC Qg, gives the designer a handle on the driver peak current needed to hit the target dv/dt without excessive Miller plateau dwell.
Maximum power dissipation is 214 W at case temperature Tc — a number that assumes an ideal heatsink; real designs derate from that ceiling based on the thermal resistance of the chosen heatsink and airflow.