What this OptiMOS N-channel delivers
The Infineon IPP072N10N3GXKSA1 is a 100 V, 80 A N-channel MOSFET from the OptiMOS series, in a TO-220-3 through-hole package. It is built for hard-switched power supplies, motor drives, and DC-DC converters where low conduction loss and a wide safe operating area matter. The 7.2 mOhm max Rds(on) at 10 V gate drive keeps copper and heatsink size manageable at 80 A continuous drain current. The 68 nC gate charge at 10 V is moderate for this current class — a standard gate-driver IC can switch it without excessive drive loss.
Rds(on) and gate charge — the numbers that matter
Rds(on) max is 7.2 mOhm at 80 A with 10 V on the gate. That is the number to plug into your conduction-loss calculation at full load. The gate charge is 68 nC at 10 V — that sets the switching energy per cycle. For a 100 kHz hard-switched converter, the gate-drive power is roughly 68 nC × 10 V × 100 kHz = 68 mW, well within a typical driver's budget. The input capacitance Ciss is 4910 pF at 50 V drain-source, which also influences the turn-on delay and driver peak current requirement.
Temperature range and mounting
Junction temperature range is -55 to 175 °C. The TO-220-3 package is through-hole — easy to heatsink with a standard clip or screw mount.
Lifecycle and sourcing
No last-time-buy or obsolescence risk for new designs. It is ROHS3 compliant.