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Infineon Technologies IPP072N10N3GXKSA1

Infineon IPP072N10N3GXKSA1 N-Channel MOSFET, 100V 80A

MPNIPP072N10N3GXKSA1
End of Life

Infineon OptiMOS series, N-Channel MOSFET, 100 V drain-source, 80 A continuous drain, 7.2 mOhm Rds(on) at 10 V, 68 nC gate charge, TO-220-3 through-hole package, -55 to 175 °C junction temperature.

$2.17Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP072N10N3GXKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 90µA
Rds on (Max) @ id, vgs7.2mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs68 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4910 pF @ 50 V

Product details

What this OptiMOS N-channel delivers

The Infineon IPP072N10N3GXKSA1 is a 100 V, 80 A N-channel MOSFET from the OptiMOS series, in a TO-220-3 through-hole package. It is built for hard-switched power supplies, motor drives, and DC-DC converters where low conduction loss and a wide safe operating area matter.

Rds(on) max is 7.2 mOhm at 80 A with 10 V on the gate. That is the number to plug into your conduction-loss calculation at full load. The gate charge is 68 nC at 10 V — that sets the switching energy per cycle. For a 100 kHz hard-switched converter, the gate-drive power is roughly 68 nC × 10 V × 100 kHz = 68 mW, well within a typical driver's budget.

Junction temperature range is -55 to 175 °C. The TO-220-3 package is through-hole — easy to heatsink with a standard clip or screw mount.

No last-time-buy or obsolescence risk for new designs. It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) and gate charge of IPP072N10N3GXKSA1?

The max Rds(on) is 7.2 mOhm at 80 A with 10 V gate drive. The max gate charge is 68 nC at 10 V.