Infineon OptiMOS™ N-Channel Power MOSFET, 80 V Vdss, 80 A Id, 7 mOhm Rds(on) at 10 V, TO-220-3 through-hole, -55 to 175 °C operating junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 136W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.5V @ 73µA |
| Rds on (Max) @ id, vgs | 7mOhm @ 73A, 10V |
| Gate charge (Qg) (Max) @ vgs | 56 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3840 pF @ 40 V |
Total gate charge (Qg) is 56 nC at 10 V. Input capacitance (Ciss) is 3840 pF at 40 V drain-source.
Maximum power dissipation is 136 W at case temperature. The junction temperature range is -55 to 175 °C.
It is ROHS3 compliant.
Maximum on-resistance is 7 mOhm at 73 A drain current with 10 V gate-to-source drive.
Yes, it is ROHS3 compliant.