Gate charge and switching considerations
This figure sets the drive current requirement for the gate driver.
The series is OptiMOS™ 2, Infineon's established trench-technology platform.

Infineon OptiMOS™ 2 series, IPP06CN10LG, N-Channel MOSFET, 100 V drain-source, 100 A continuous drain, 6.2 mOhm Rds(on) at 10 V, 124 nC gate charge, TO-220-3 through-hole package, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ 2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 214W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.4V @ 180µA |
| Rds on (Max) @ id, vgs | 6.2mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 124 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 11900 pF @ 50 V |
This figure sets the drive current requirement for the gate driver.
The series is OptiMOS™ 2, Infineon's established trench-technology platform.
Yes, the IPP06CN10LG is ROHS3 compliant, meeting the latest EU RoHS directive.
The IPP06CN10LG is part of the OptiMOS™ 2 series. A direct pin-compatible equivalent within the same series would share the TO-220-3 package and similar Rds(on) and current ratings — verify the exact ordering code for your voltage and on-resistance target.
The IPP06CN10LG is a higher-rated part than the IRFZ44N: 100 V vs 55 V drain-source, 100 A vs 49 A continuous drain, and lower Rds(on) at 6.2 mOhm vs 17.5 mOhm. It can replace the IRFZ44N in designs that can accommodate the higher voltage rating and the TO-220-3 footprint, but verify gate drive voltage compatibility — the IPP06CN10LG is characterised at 10 V.