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Infineon Technologies IPP065N04NG

Infineon IPP065N04NG OptiMOS N-Channel MOSFET, 40 V

MPNIPP065N04NG
End of Life

Infineon OptiMOS™ IPP065N04NG, N-Channel MOSFET, 40 V Vdss, 50 A continuous drain, 6.5 mOhm Rds(on) at 10 V, 34 nC gate charge, TO-220-3 package, -55°C to 175°C junction temperature.

$0.35Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP065N04NG specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 200µA
Rds on (Max) @ id, vgs6.5mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2800 pF @ 20 V

Product details

Total gate charge is 34 nC at 10 V. The 2800 pF input capacitance at 20 V drain-source helps estimate the switching loss: the driver must charge and discharge this capacitance each cycle, so higher frequencies increase the driver's power dissipation.

175°C junction — high-temp margin

Through-hole TO-220 — thermal and mechanical fit

The PG-TO220-3 package (standard TO-220 outline) mounts through a single hole in the PCB or heatsink, with the tab soldered to the copper island for thermal transfer. The 68 W power dissipation at case temperature assumes the tab is bolted to an infinite heatsink; in practice, derate according to the thermal resistance junction-to-case (not listed here, but typical for TO-220 is ~1–2 °C/W).

ROHS3 compliant.

Frequently asked questions

What is the maximum Rds(on) and gate charge of IPP065N04NG?

Maximum Rds(on) is 6.5 mOhm at 50 A drain current and 10 V gate drive.

Is IPP065N04NG RoHS compliant?

Yes, it is ROHS3 compliant per Infineon's listing.