IPP057N08N3GXKSA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ series, N-Channel MOSFET, 80 V drain-source, 80 A continuous drain, 5.7 mOhm Rds(on) at 10 V, TO-220-3 through-hole, -55°C to 175°C junction temperature.

Infineon Technologies IPP057N08N3GXKSA1
Download datasheet (PDF)
[IN STOCK] In Stock: 1 pcs
$5.28/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPP057N08N3GXKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 90µA
Rds on (Max) @ id, vgs5.7mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs69 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4750 pF @ 40 V

Technical details

Switching and drive — gate charge and input capacitance

The IPP057N08N3GXKSA1: Gate charge is 69 nC at 10 V, and input capacitance measures 4750 pF at 40 V drain-source. The 4750 pF input capacitance is moderate for an 80 A rated device.

Package and mounting — TO-220-3 with PG-TO220-3 variant

The IPP057N08N3GXKSA1 ships in a standard TO-220-3 package, supplier device code PG-TO220-3. Mounting requires a heatsink with a TO-220 clip or M3 screw; thermal interface material between tab and heatsink is recommended for the 150 W maximum power dissipation. The through-hole leads suit wave-solder or hand-solder assembly.

ROHS3 compliant — no exemptions for lead in solder or cadmium in plating, which simplifies EU and California compliance documentation.

IPP057N08N3GXKSA1
[ALLOC] verified
Quote