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Infineon Technologies IPP052N08N5AKSA1

Infineon IPP052N08N5AKSA1 N-Channel MOSFET, 80V 80A, 5.2mOhm

MPNIPP052N08N5AKSA1
End of Life

Infineon OptiMOS™ IPP052N08N5AKSA1, N-channel MOSFET, 80 V Vdss, 80 A continuous drain, 5.2 mOhm Rds(on) at 10 V, 53 nC gate charge, TO-220-3 through-hole, -55°C to 175°C junction.

$2.46Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPP052N08N5AKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.8V @ 66µA
Rds on (Max) @ id, vgs5.2mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3770 pF @ 40 V

Product details

Gate charge and switching speed

Total gate charge is 53 nC at 10 V. For a 100 kHz hard-switched converter the gate drive sees about 5.3 mA average current — within the capability of most bootstrap drivers, but the 3770 pF input capacitance at 40 V drain means the driver must source a peak current of several amps during the miller plateau to keep switching edges clean.

175°C junction — margin above the usual 150°C ceiling

Operating junction temperature spans -55°C to 175°C, 25°C higher than the typical industrial MOSFET. That extra headroom matters in a sealed enclosure or under-hood environment where ambient air reaches 105°C and the heatsink temperature approaches 125°C — the Rds(on) derating at 175°C is roughly 2× the 25°C value, so the 5.2 mOhm at 25°C becomes about 10.4 mOhm at the hot end, which still keeps conduction losses within the 125 W budget at derated current.

Infineon continues to manufacture the OptiMOS N5 generation in the TO-220-3 (PG-TO220-3) package.

Frequently asked questions

What is the Rds(on) of IPP052N08N5AKSA1 at 10 V?

Maximum Rds(on) is 5.2 mOhm at 80 A drain current with 10 V gate drive. The drive voltage range for achieving rated Rds(on) is 6 V to 10 V.

What is the lead time for IPP052N08N5AKSA1?

Lead time is confirmed at quote time against your specific order quantity and delivery schedule. Submit an RFQ for current lead-time information.