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Infineon Technologies IPP045N10N3GXKSA1

Infineon IPP045N10N3GXKSA1 N-Channel MOSFET

MPNIPP045N10N3GXKSA1
End of Life

Infineon OptiMOS IPP045N10N3GXKSA1, N-Channel MOSFET, 100 V Vdss, 100 A Id, 4.5 mOhm Rds(on) at 10 V, 117 nC Qg, TO-220-3 through-hole, -55 to 175 °C.

$2.96Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPP045N10N3GXKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation214W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 150µA
Rds on (Max) @ id, vgs4.5mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs117 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8410 pF @ 50 V

Product details

Gate charge and switching speed

Total gate charge is 117 nC at 10 V, with an input capacitance of 8410 pF at 50 V drain. For a 100 kHz hard-switched converter, the gate driver must deliver an average 11.7 mA just to charge the gate — a standard 1 A driver handles it easily, but the 8410 pF input capacitance means the driver's peak current determines the rise and fall times. The 6 V and 10 V drive voltage ratings let you optimise between Rds(on) and switching loss; at 6 V the on-resistance is higher but the gate charge drawn per cycle drops.

Thermal headroom in a TO-220

The junction is rated to 175 °C, 25 °C above the typical 150 °C ceiling — useful for fault hold-up or high-ambient enclosures where the heatsink is already sized for the steady-state 214 W dissipation limit. The PG-TO220-3 package is through-hole, so it bolts to a chassis or heatsink with a single screw. No lab bench needed for the swap; a socketed TO-220 in a field-kit is a five-minute replacement if you have the thermal compound.

Sourcing and lifecycle

ROHS3 compliant.

Frequently asked questions

Is IPP045N10N3GXKSA1 obsolete or still active?

The lifecycle status is active.

Does IPP045N10N3GXKSA1 have a recommended replacement or cross reference?

No official successor or cross-reference is listed for this MPN. The BOM is single-sourced to the Infineon OptiMOS line. The peer IPD50R950CEAUMA1 is a 500 V CoolMOS surface-mount part with 950 mOhm Rds(on) — it is not a functional alternative for a 100 V, 4.5 mOhm socket.