Infineon OptiMOS™ IPP041N04NGXKSA1, N-channel MOSFET, 40 V drain-source, 80 A continuous drain, 4.1 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 94W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 45µA |
| Rds on (Max) @ id, vgs | 4.1mOhm @ 80A, 10V |
| Gate charge (Qg) (Max) @ vgs | 56 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4500 pF @ 20 V |
Total gate charge is 56 nC at 10 V. Input capacitance Ciss is 4500 pF at 20 V drain-source — the gate-driver output impedance should be low enough to charge this capacitance within the desired dead-time window.
It is ROHS3 compliant.
The maximum on-resistance is 4.1 mOhm at 80 A drain current with 10 V gate drive. Typical values are lower; the datasheet curve shows the temperature dependence.