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Infineon Technologies IPP040N06NF2SAKMA1

Infineon IPP040N06NF2SAKMA1 OptiMOS N-Channel MOSFET, 60V

MPNIPP040N06NF2SAKMA1
End of Life

Infineon OptiMOS IPP040N06NF2SAKMA1, N-Channel MOSFET, 60 V Vdss, 80 A Id, 4 mOhm Rds(on) at 10 V, 44 nC Qg, TO-220-3, -55 to 175 °C.

$1.36Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

IPP040N06NF2SAKMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation3W (Ta), 107W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.3V @ 50µA
Rds on (Max) @ id, vgs4mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3375 pF @ 30 V

Product details

Gate charge and switching — 44 nC at 10 V

Total gate charge is 44 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current needed is 4.4 mA — well within the capability of a standard 2 A gate driver. The 3375 pF input capacitance at 30 V drain-source gives a rough Miller-plateau charge that a designer can use to estimate switching losses in a hard-switched topology.

Thermal budget — 107 W at the case

The device is rated for 107 W power dissipation at the case temperature (Tc) and 3 W in free air at 25 °C ambient. The -55 °C to 175 °C junction range covers military-temp environments without restriction.

Package and mounting — through-hole TO-220-3

The PG-TO220-3 package is a standard through-hole TO-220 with three leads. The tab is the drain. Through-hole mounting simplifies manual assembly and rework in prototype runs, but the larger footprint versus a D²PAK or LFPAK means the PCB layout must allocate space for the heatsink clip or screw boss.

Gate drive thresholds — 6 V and 10 V

The drive voltage range for achieving rated Rds(on) is 6 V minimum, 10 V recommended. The threshold voltage is 3.3 V maximum at 50 µA drain current. For a 5 V logic-level gate drive, the 6 V minimum means the FET will not reach its lowest on-resistance — expect higher conduction loss. A 10 V gate supply or a bootstrap charge-pump is the correct choice for full performance.

Frequently asked questions

Is IPP040N06NF2SAKMA1 RoHS compliant?

Yes, the part is ROHS3 compliant per the Infineon product status.