60 V N-channel in a TO-220 — the OptiMOS power switch for 48 V bus rails
The Infineon IPP040N06NAKSA1 is a 60 V N-channel MOSFET from the OptiMOS series, rated for 80 A continuous drain current at the case and 20 A at ambient. The 4 mOhm maximum on-resistance at a 10 V gate drive is the key figure for conduction-loss budgeting in a 48 V nominal bus converter, motor drive, or high-current load switch. The TO-220-3 through-hole package (PG-TO220-3 supplier code) has a metal tab that is electrically the drain terminal. That means the heatsink must either be electrically isolated from the chassis or share the drain potential — a common consideration when bolting the tab to a grounded enclosure.
On-resistance, gate charge, and the drive voltage window
The Rds(on) of 4 mOhm is specified at Id = 80 A and Vgs = 10 V, with the drive voltage range spanning 6 V to 10 V for achieving the minimum on-resistance. A gate driver that cannot swing to 10 V leaves part of the Rds(on) improvement on the table — the 6 V minimum is the floor for the device to turn on hard, but the 10 V level is where the datasheet guarantees the 4 mOhm figure. Total gate charge is 38 nC at a 10 V gate drive. At a 100 kHz switching frequency the average gate-drive current needed is about 3.8 mA, which any standard MOSFET driver handles. The practical limit is the peak current during the Miller plateau — the driver must source enough instantaneous current to charge that 38 nC within the desired switching transition time, typically a few tens of nanoseconds. Input capacitance Ciss is 2700 pF measured at Vds = 30 V, which together with the gate charge gives the designer the numbers for calculating the driver's switching loss and the gate-resistor value for slew-rate control.
Junction temperature and thermal design
The TO-220-3 tab is the primary thermal path. Bolting it to a heatsink with thermal compound is standard practice; the tab-to-heatsink thermal resistance determines how much of the 107 W case dissipation can actually be pulled out of the device.
Active lifecycle and channel posture
Sourced to order against the BOM quantity through independent distribution.