75 V, 3.4 mOhm — the low-side workhorse
The Infineon IPP034NE7N3GXKSA1 is an N-channel OptiMOS power MOSFET rated for 75 V drain-source and 100 A continuous drain current in a through-hole TO-220-3 package.
Gate charge and switching budget
Total gate charge is 117 nC at 10 V. At 100 kHz switching, the average gate drive current needed is 11.7 mA — well within the capability of a standard MOSFET driver, but the 8130 pF input capacitance at 37.5 V Vds means the driver must deliver a 10 A to 15 A peak for clean Miller-plateau transitions. The 75 V Vdss provides enough headroom for 48 V bus rails and 12 V automotive systems with load-dump transients, while the ±20 V maximum gate-source rating gives margin against gate overshoot in hard-switched topologies.
Thermal and mechanical fit
The TO-220-3 package with a PG-TO220-3 supplier designation is a standard through-hole footprint that bolts to a heatsink with a single M3 screw — the thermal pad under the tab is the primary heat path.
Lifecycle and compliance
ROHS3 compliant per the manufacturer's declaration.