Infineon OptiMOS N-channel MOSFET, 80 V drain-source, 120 A continuous drain, 3.4 mOhm Rds(on) at 10 V, TO-220-3 through-hole, -55 to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 167W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.8V @ 108µA |
| Rds on (Max) @ id, vgs | 3.4mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 87 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6240 pF @ 40 V |
The IPP034N08N5AKSA1: Gate charge is 87 nC at 10 V. Input capacitance sits at 6240 pF at 40 V Vds.
Through-hole TO-220-3 (PG-TO220-3) is the workhorse package for point-of-load converters, motor-drive output stages, and secondary-side synchronous rectification.
The ±20 V Vgs max gives margin for gate-drive overshoot.
No Pb-free option question needed; the ROHS3 compliance covers that.
Continuous drain current is 120 A at 25°C case temperature. Derate for higher ambient and switching frequency.
Yes, it is ROHS3 compliant.
Yes. With an 80 V drain-source rating, it has ample margin for 12 V load-dump transients. Use a 10 V gate drive for minimum on-resistance.