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Infineon Technologies IPP034N03LGXKSA1
Infineon Technologies

Infineon IPP034N03LGXKSA1 OptiMOS N-Ch 30V 80A TO-220-3

MPNIPP034N03LGXKSA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, IPP034N03LGXKSA1, 30 V Vdss, 80 A Id, 3.4 mOhm Rds(on) at 10 V, TO-220-3 package, -55 °C to 175 °C junction temperature.

$1.83Ref. price · indicative, final on quote
IPP034N03LGXKSA1 datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPP034N03LGXKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation94W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs3.4mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs51 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5300 pF @ 15 V

Product details

The 3.4 mOhm maximum on-resistance at 30 A, 10 V gate drive sets the conduction loss floor — at 80 A the I²R loss reaches roughly 22 W, which the 94 W power-dissipation ceiling can handle with adequate heatsinking.

Gate drive and switching — 5 V logic compatible

The drive voltage range spans 4.5 V to 10 V for rated Rds(on), so a 5 V microcontroller output or a 5 V gate driver can fully enhance the channel. Gate charge totals 51 nC at 10 V — a 5 V drive will deliver slightly higher on-resistance but still well below the 3.4 mOhm ceiling if the gate driver can source the charge quickly enough. Input capacitance is 5300 pF at 15 V drain bias.

Temperature range and package — through-hole for high-current routing

The TO-220-3 through-hole package (PG-TO220-3-1) allows direct heatsink mounting and handles the 94 W power dissipation with a proper thermal interface.

Frequently asked questions

What is the Rds(on) of IPP034N03LGXKSA1?

The maximum Rds(on) is 3.4 mOhm at 30 A drain current with 10 V gate drive, specified at 25 °C junction temperature.

Is IPP034N03LGXKSA1 compatible with 5V gate drive?

Yes. The drive voltage range includes 4.5 V as the minimum for rated Rds(on), so a 5 V logic-level gate drive fully enhances the channel. On-resistance at 4.5 V will be slightly higher than the 3.4 mOhm figure at 10 V, but the part is designed for 5 V operation.

Is IPP034N03LGXKSA1 RoHS compliant?

Yes, it is ROHS3 compliant.