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Infineon Technologies IPP034N03LG

IPP034N03LG N-Channel MOSFET, 30 V, 3.4 mOhm, TO-220-3

MPNIPP034N03LG
End of Life

Infineon OptiMOS™ 3 IPP034N03LG, N-Channel MOSFET, 30 V Vdss, 80 A Id, 3.4 mOhm Rds(on) at 10 V, TO-220-3 through-hole, -55°C to 175°C.

$0.69Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPP034N03LG Technical Specifications
ParameterValue
SeriesOptiMOS™ 3
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation94W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs3.4mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs51 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5300 pF @ 15 V

Product details

30 V, 3.4 mOhm — the conduction-loss anchor

The IPP034N03LG: The continuous drain current is rated at 80 A at a 25°C case temperature, though in practice you derate that figure for your actual operating junction temperature and heatsinking.

Gate drive and switching budget

Total gate charge is 51 nC at 10 V drive. Input capacitance (Ciss) is 5300 pF at 15 V drain-source.

Package and thermal path

Housed in a standard TO-220-3 through-hole package (Infineon's variant PG-TO220-3-1), the part is intended for heatsink mounting via the metal tab. Maximum power dissipation is 94 W at the case temperature, but the actual limit depends on the heatsink's thermal resistance and ambient conditions.

Lifecycle and compliance

The series is OptiMOS™ 3, a mature and widely used generation.