Infineon OptiMOS N-Channel MOSFET, 60V Vdss, 120A Id, 3.2mOhm Rds(on) max at 100A 10V, 165nC Qg, TO-220-3, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 188W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 118µA |
| Rds on (Max) @ id, vgs | 3.2mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 165 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 13000 pF @ 30 V |
The IPP032N06N3GXKSA1 is an N-channel MOSFET in a TO-220-3 through-hole package, rated 60 V Vdss and 120 A Id continuous.
Total gate charge is 165 nC at 10 V. Input capacitance is 13000 pF at 30 V Vds.
Maximum power dissipation is 188 W at case temperature.
Maximum on-resistance is 3.2 mOhm at 100 A drain current with 10 V gate drive. This is the value to use for worst-case conduction loss calculations at 25 °C junction; the actual Rds(on) increases with temperature per the normalised curve in the datasheet.
Total gate charge is 165 nC at 10 V gate drive. This determines the average current the gate driver must supply at the target switching frequency.
Yes, it is ROHS3 compliant, which restricts lead and other hazardous substances.