Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS™ IPP030N10N3GXKSA1, N-Channel MOSFET, 100V Vdss, 100A Id, 3mOhm Rds(on) at 10V, TO-220-3 through-hole, -55°C to 175°C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.5V @ 275µA |
| Rds on (Max) @ id, vgs | 3mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 206 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14800 pF @ 50 V |
The Infineon IPP030N10N3GXKSA1 is a 100 V, 100 A N-channel MOSFET from the OptiMOS™ series. The 3 mOhm maximum Rds(on) at 10 V drive and 100 A continuous drain current define its class.
No last-time-buy or end-of-life notice is in effect. The ROHS3 compliance covers the current regulatory requirements for lead-free assembly.
