60 V N-channel OptiMOS in a TO-220-3
The Infineon IPP029N06NAKSA1 is an N-channel enhancement-mode MOSFET from the OptiMOS series, housed in a through-hole PG-TO220-3 package. It is rated for a drain-source voltage of 60 V and a continuous drain current of 100 A at the case, with a maximum Rds(on) of 2.9 mOhm at Vgs=10 V and Id=100 A.
Conduction and switching parametrics
The 2.9 mOhm Rds(on) at 10 V drive keeps conduction losses low in high-current paths — at 100 A the dissipation is under 29 W in the channel alone, which the 136 W case-rated power dissipation can handle with adequate heatsinking. Gate charge totals 56 nC at 10 V, and input capacitance is 4100 pF at 30 V Vds. These numbers set the driver current needed for a given switching frequency: a 56 nC gate switched at 100 kHz draws about 5.6 mA average from the gate drive supply. The gate threshold voltage is specified at 2.8 V maximum with 75 µA drain current, and the recommended drive voltage range for achieving the rated Rds(on) is 6 V to 10 V.
Temperature range and package
This makes the part suitable for under-hood automotive, high-ambient industrial enclosures, or any environment where the die sees sustained high temperature. The PG-TO220-3 package is a standard three-lead through-hole format with a metal tab for heatsink attachment.