Infineon OptiMOS N-Channel MOSFET, IPP020N06NAKSA1, 60 V Vdss, 29 A (Ta) / 120 A (Tc), 2 mOhm Rds(on) at 10 V, 106 nC gate charge, TO-220-3, -55 to 175 °C junction.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 29A (Ta), 120A (Tc) |
| Power dissipation | 3W (Ta), 214W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.8V @ 143µA |
| Rds on (Max) @ id, vgs | 2mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 106 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7800 pF @ 30 V |
The dual current spec — 29 A at ambient (Ta) versus 120 A at case temperature (Tc) — is the first thing to reconcile on the BOM.
Drive voltage range is 6 V to 10 V for minimum and maximum Rds(on). The 2 mOhm figure is specified at 10 V.
ROHS3 compliance is confirmed.
The maximum Rds(on) is 2 mOhm at 100 A drain current with 10 V applied to the gate. This is the rated condition; the on-resistance will be higher at lower gate voltages or lower currents, so check the typical curve in the datasheet for your operating point.
Yes, the part is ROHS3 compliant per Infineon's classification.
The IPP020N06NAKSA1 has a lower Rds(on) (2 mOhm vs approximately 17.5 mOhm for IRFZ44) and higher current rating (120 A vs 49 A) in the same TO-220 footprint. Gate drive requirements differ — the OptiMOS part needs 10 V for full enhancement versus the IRFZ44's 10 V as well, so the drive circuit is compatible. The higher gate charge (106 nC vs roughly 60 nC for IRFZ44) means the gate driver must supply more current to maintain the same switching speed. Check the switching loss budget before substituting.