Skip to main content
Infineon Technologies IPP015N04NGXKSA1

Infineon IPP015N04NGXKSA1 OptiMOS N-Ch 40V 120A TO-220

MPNIPP015N04NGXKSA1
End of Life

Infineon OptiMOS, IPP015N04NGXKSA1, N-Channel MOSFET, 40 V Vdss, 120 A Id, 1.5 mOhm Rds(on) at 100 A, 10 V, 250 nC Qg, TO-220-3, -55 to 175 °C.

$4.78Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPP015N04NGXKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 200µA
Rds on (Max) @ id, vgs1.5mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs250 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds20000 pF @ 20 V

Product details

1.5 mOhm Rds(on) — what it costs at 100°C junction

At a typical 125°C junction, expect that on-resistance to nearly double, which is the real conduction loss the thermal design must budget for.

Gate charge and switching loss budget

Total gate charge Qg is 250 nC at 10 V. For a 100 kHz switching frequency, the gate driver must supply 25 mA average — well within a standard totem-pole driver, but the peak current capability matters for the rise-time. The 20000 pF input capacitance at 20 V Vds tells you the driver sees a substantial capacitive load on each switching edge.

175°C junction — thermal headroom for high-current designs

Rated operating junction temperature from -55°C to 175°C gives 25°C more margin than the common 150°C ceiling. In a 120 A continuous application, that extra headroom translates to either a smaller heatsink or higher ambient tolerance before derating. Power dissipation is rated at 250 W at case temperature — a number that assumes an infinite heatsink, so real-world derating must follow the datasheet's thermal resistance curve.

Through-hole TO-220 — the workhorse package

Housed in a standard TO-220-3 (PG-TO220-3-1) with through-hole mounting. The tab is the drain. No MSL concerns — the leadframe is plated for soldering into a PCB or bolted to a heatsink.

Frequently asked questions

What is the Rds(on) of IPP015N04NGXKSA1?

Maximum Rds(on) is 1.5 mOhm at 100 A drain current with 10 V gate drive. This is specified at 25°C junction; expect the value to increase with temperature, roughly doubling at 125°C.

What series is IPP015N04NGXKSA1 part of?

It belongs to Infineon's OptiMOS series of N-channel power MOSFETs.