Active production — 201 A continuous drain in a TO-220
The IPP011N04NF2SAKMA1: This is a through-hole part in a PG-TO220-3-U05 package, so it suits designs where a TO-220 footprint is already on the board or where a heatsink is mounted through the tab.
Gate charge and switching speed — 315 nC at 10 V
Total gate charge Qg is 315 nC at a 10 V gate drive. The input capacitance Ciss is 15,000 pF at 20 V drain, a figure that sets the rise-time budget when the gate resistor is chosen. The gate threshold voltage Vgs(th) is 3.4 V max at 249 µA drain, and the recommended drive voltage range for achieving the rated Rds(on) is 6 V to 10 V. The absolute maximum gate-source voltage is ±20 V, so a 12 V gate drive rail is safe with margin. Power dissipation is 375 W at the case (Tc) and 3.8 W at ambient (Ta) — the case figure assumes a heatsink that holds Tc at 25 °C.
RoHS3 compliance and sourcing posture
The IPP011N04NF2SAKMA1 is RoHS3 compliant and carries an active lifecycle status — Infineon continues to manufacture it. The part is supplied in tube packaging.