Infineon CoolMOS™ P7 series, IPN80R900P7ATMA1, N-Channel MOSFET, 800 V drain-source, 6 A continuous drain, 900 mOhm Rds(on) at 10 V, 15 nC gate charge, PG-SOT223 surface-mount package, -55°C to 150°C operating junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 7W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 3.5V @ 110µA |
| Rds on (Max) @ id, vgs | 900mOhm @ 2.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 350 pF @ 500 V |
The PG-SOT223 package limits the maximum power dissipation to 7 W at case temperature. At 6 A drain current, the 900 mOhm Rds(on) produces about 32 W of conduction loss at 25°C junction — well above the package limit — so the part is not intended for continuous 6 A operation. It fits designs where the average current is lower, or where the duty cycle is short enough to stay within the thermal envelope.
ROHS3 compliance is confirmed.
Yes, the part is listed as ROHS3 compliant.
Yes. The SOT223 package limits dissipation to 7 W, so the average power loss must be budgeted accordingly.