Infineon Technologies · CoolMOS™ P7 Series
Infineon CoolMOS™ P7 series, IPN80R900P7ATMA1, N-Channel MOSFET, 800 V drain-source, 6 A continuous drain, 900 mOhm Rds(on) at 10 V, 15 nC gate charge, PG-SOT223 surface-mount package, -55°C to 150°C operating junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 7W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 3.5V @ 110µA |
| Rds on (Max) @ id, vgs | 900mOhm @ 2.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 350 pF @ 500 V |
The PG-SOT223 package limits the maximum power dissipation to 7 W at case temperature. At 6 A drain current, the 900 mOhm Rds(on) produces about 32 W of conduction loss at 25°C junction — well above the package limit — so the part is not intended for continuous 6 A operation. It fits designs where the average current is lower, or where the duty cycle is short enough to stay within the thermal envelope.
ROHS3 compliance is confirmed.