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Infineon Technologies IPN80R600P7ATMA1

Infineon IPN80R600P7ATMA1 CoolMOS P7 N-Ch MOSFET

MPNIPN80R600P7ATMA1
End of Life

Infineon CoolMOS™ P7 series, IPN80R600P7ATMA1, N-Channel MOSFET, 800 V Vdss, 8 A Id, 600 mOhm Rds(on) at 10 V, PG-SOT223 package, -55 to 150 °C operating junction temperature.

$1.66Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPN80R600P7ATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation7.4W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3.5V @ 170µA
Rds on (Max) @ id, vgs600mOhm @ 3.4A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds570 pF @ 500 V

Product details

Lifecycle and supply posture

Marked as Active and ROHS3 compliant. No end-of-life notice or last-time-buy schedule.

Rework and board integration

The PG-SOT223 has a large center tab on the bottom — that's your thermal pad. Solder it to a copper pour on the PCB; a via array under the tab helps pull heat to the inner layers.

Frequently asked questions

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Is IPN80R600P7ATMA1 obsolete or active?

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What are the key specifications of IPN80R600P7ATMA1?

Quick spec verification saves time for engineers evaluating fit without reading full datasheet.