Marked as Active and ROHS3 compliant.
Rework and board integration
The PG-SOT223 has a large center tab on the bottom — that's your thermal pad. Solder it to a copper pour on the PCB; a via array under the tab helps pull heat to the inner layers.
Infineon IPN80R600P7ATMA1 CoolMOS P7 N-Ch MOSFET
MPNIPN80R600P7ATMA1
End of Life
Infineon CoolMOS™ P7 series, IPN80R600P7ATMA1, N-Channel MOSFET, 800 V Vdss, 8 A Id, 600 mOhm Rds(on) at 10 V, PG-SOT223 package, -55 to 150 °C operating junction temperature.
$1.66Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 8A (Tc) |
| Power dissipation | 7.4W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 3.5V @ 170µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 3.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 570 pF @ 500 V |
Product details
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