800V N-channel in a SOT223 — where it fits
The 4.5Ω maximum on-resistance at 10V gate drive and 400mA drain current keeps conduction losses low enough for a SOT223 package, which dissipates up to 6W at the case.
Gate charge and switching speed
Total gate charge is 4 nC at 10V, and input capacitance is 80 pF at 500V drain-source. Those numbers mean a small gate-drive transformer or a low-current driver IC can switch this FET at tens of kilohertz without burning drive power. The ±20V Vgs max gives headroom for gate-drive overshoot in hard-switched topologies.
Temperature range and thermal reality
Junction temperature range is -55°C to 150°C, which covers military and industrial extremes — downhole tools, outdoor telecom rectifiers, engine-bay aux converters. The 6W dissipation ceiling in the SOT223 means the thermal pad on the PCB must be generous; a few square centimetres of copper on the drain tab is the difference between a reliable supply and a part that drifts off-resistance as it heats up.
No last-time-buy notice, no end-of-life flag. ROHS3 compliant.