800V N-channel in a SOT223 — where it fits
The 4.5Ω maximum on-resistance at 10V gate drive and 400mA drain current keeps conduction losses low enough for a SOT223 package, which dissipates up to 6W at the case.
Total gate charge is 4 nC at 10V, and input capacitance is 80 pF at 500V drain-source. Those numbers mean a small gate-drive transformer or a low-current driver IC can switch this FET at tens of kilohertz without burning drive power. The ±20V Vgs max gives headroom for gate-drive overshoot in hard-switched topologies.
Temperature range and thermal reality
No last-time-buy notice, no end-of-life flag. ROHS3 compliant.