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Infineon Technologies IPN80R4K5P7ATMA1

Infineon IPN80R4K5P7ATMA1 CoolMOS P7 N-Ch MOSFET

MPNIPN80R4K5P7ATMA1
End of Life

Infineon CoolMOS™ P7 series, IPN80R4K5P7ATMA1, N-Channel MOSFET, 800V Vdss, 1.5A Id, 4.5Ω Rds(on) at 10V, 4 nC Qg, PG-SOT223 package, -55°C to 150°C junction temperature.

$0.68Ref. price · indicative, final on quote
Infineon Technologies IPN80R4K5P7ATMA1 datasheet (PDF)
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPN80R4K5P7ATMA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.5A (Tc)
Power dissipation6W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3.5V @ 20µA
Rds on (Max) @ id, vgs4.5Ohm @ 400mA, 10V
Gate charge (Qg) (Max) @ vgs4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds80 pF @ 500 V

Product details

800V N-channel in a SOT223 — where it fits

The 4.5Ω maximum on-resistance at 10V gate drive and 400mA drain current keeps conduction losses low enough for a SOT223 package, which dissipates up to 6W at the case.

Total gate charge is 4 nC at 10V, and input capacitance is 80 pF at 500V drain-source. Those numbers mean a small gate-drive transformer or a low-current driver IC can switch this FET at tens of kilohertz without burning drive power. The ±20V Vgs max gives headroom for gate-drive overshoot in hard-switched topologies.

Temperature range and thermal reality

No last-time-buy notice, no end-of-life flag. ROHS3 compliant.