Infineon CoolMOS™ P7 N-Channel MOSFET, 800 V, 1.9 A, 3.3 Ohm Rds(on) at 10 V, PG-SOT223, Surface Mount, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 1.9A (Tc) |
| Power dissipation | 6.1W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 3.5V @ 30µA |
| Rds on (Max) @ id, vgs | 3.3Ohm @ 590mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 120 pF @ 500 V |
The IPN80R3K3P7ATMA1: Gate charge is 5.8 nC at 10 V. Input capacitance is 120 pF at 500 V.
The PG-SOT223 package has a 6.1 W maximum power dissipation at the case.
Yes, the part is listed as ROHS3 Compliant.