Infineon CoolMOS™ P7 series, IPN80R1K4P7ATMA1, N-Channel MOSFET, 800 Vdss, 4 A Id, 1.4 Ohm Rds(on) @ 10 V, 10 nC Qg, PG-SOT223 package, -55°C to 150°C Tj.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 7W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 3.5V @ 70µA |
| Rds on (Max) @ id, vgs | 1.4Ohm @ 1.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 250 pF @ 500 V |
The PG-SOT223 package dissipates 7 W maximum at the case. That figure assumes adequate PCB copper for heat spreading; a design pulling 4 A continuous will need a thermal via pattern and a reasonable copper pour on the drain tab.
No last-time-buy notice is in effect, so the part is safe to qualify for new BOM lines.
Yes. The 800 V drain-source rating and 4 A current capability make it a fit for flyback converters, PFC stages, and auxiliary supplies in industrial and telecom power systems. The 10 nC gate charge supports switching frequencies typical of modern SMPS controllers.
The CoolMOS™ P7 series includes multiple Rds(on) and current grades in the same SOT223 footprint. A direct pin-compatible equivalent within the same family would share the PG-SOT223 package and 800 V rating; verify the specific Rds(on) and current rating against your design's conduction loss budget.