Skip to main content
Infineon Technologies IPN80R1K4P7ATMA1
Infineon Technologies

Infineon IPN80R1K4P7ATMA1 CoolMOS™ P7 N-Ch MOSFET, 800 V

MPNIPN80R1K4P7ATMA1
End of Life

Infineon CoolMOS™ P7 series, IPN80R1K4P7ATMA1, N-Channel MOSFET, 800 Vdss, 4 A Id, 1.4 Ohm Rds(on) @ 10 V, 10 nC Qg, PG-SOT223 package, -55°C to 150°C Tj.

$1.31Ref. price · indicative, final on quote
IPN80R1K4P7ATMA1 datasheet
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPN80R1K4P7ATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation7W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3.5V @ 70µA
Rds on (Max) @ id, vgs1.4Ohm @ 1.4A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds250 pF @ 500 V

Product details

SOT223 thermal reality — plan the copper area

The PG-SOT223 package dissipates 7 W maximum at the case. That figure assumes adequate PCB copper for heat spreading; a design pulling 4 A continuous will need a thermal via pattern and a reasonable copper pour on the drain tab. The 250 pF input capacitance at 500 V drain bias is low enough that a standard gate-drive IC can switch it without excessive cross-conduction.

Active production — no LTB clock ticking

Infineon lists the IPN80R1K4P7ATMA1 as Active with ROHS3 compliance. No last-time-buy notice is in effect, so the part is safe to qualify for new BOM lines.

Frequently asked questions

Can IPN80R1K4P7ATMA1 be used in power supplies?

Yes. The 800 V drain-source rating and 4 A current capability make it a fit for flyback converters, PFC stages, and auxiliary supplies in industrial and telecom power systems. The 10 nC gate charge supports switching frequencies typical of modern SMPS controllers.

Is IPN80R1K4P7ATMA1 equivalent to any other MOSFET?

The CoolMOS™ P7 series includes multiple Rds(on) and current grades in the same SOT223 footprint. A direct pin-compatible equivalent within the same family would share the PG-SOT223 package and 800 V rating; verify the specific Rds(on) and current rating against your design's conduction loss budget.