700 V breakdown in a small SOT223 — what that buys you
The IPN70R750P7SATMA1 is an N-channel CoolMOS™ P7 MOSFET that blocks 700 V drain-to-source and conducts 6.5 A continuous at 25 °C case temperature — all in a PG-SOT223 surface-mount package. That voltage rating puts it in the primary-side switching spot for offline flyback converters, auxiliary power supplies, and LED drivers where the bulk rail sits at 400 VDC or less. The 750 mOhm Rds(on) at 10 V gate drive means conduction losses are moderate; you wouldn't spec this for a 300 W PFC stage, but for a 20–50 W auxiliary winding or a bias supply it's a clean fit.
Gate charge and drive reality
Total gate charge is 8.3 nC at 10 V — a low number that keeps the gate-drive power trivial. A standard PWM controller with a 10 V gate-drive output can switch this FET through a simple series resistor; no booster stage needed. The input capacitance of 306 pF at 400 V drain bias confirms the switching node capacitance is modest, so the turn-on and turn-off edges stay clean without heroic layout. The gate is rated ±16 V max, so a 12 V or 15 V regulated rail is fine — just don't let ringing push it past that ceiling.
Package and thermal budget
The PG-SOT223 package (TO-261-4 equivalent) is a standard three-lead surface-mount part with a large drain tab. Maximum power dissipation is 6.7 W at case temperature — that's the limit with the tab soldered to a reasonable copper area on a standard PCB. In practice, the 6.5 A continuous rating is thermally constrained in still air; the real continuous current you can pull depends on the board's copper pour and airflow. For a 20 W flyback running at 70–100 kHz, the junction temperature stays well inside the -40 °C to 150 °C operating range.
Lifecycle and compliance
ROHS3 compliant per the listing. The CoolMOS series is Infineon's mainstream high-voltage MOSFET platform, so long-term supply stability is better than a niche or legacy part.