700 V CoolMOS P7 in a compact SOT223 — what it buys you
The PG-SOT223 package (TO-261-4) keeps the footprint small — about 6.5 x 3.5 mm — but limits power dissipation to 6.9 W at case temperature. That thermal ceiling steers this part toward auxiliary flyback converters, bias supplies, and low-power PFC stages where the average current stays under 1 A continuous.
Gate drive and switching — no separate driver needed
With a maximum gate charge of 10.5 nC at 10 V, the IPN70R600P7SATMA1 can be switched directly from a PWM controller's output pin. The input capacitance (Ciss) is 364 pF at 400 V drain-source, which keeps the switching losses manageable even at frequencies above 100 kHz in a flyback topology. The gate threshold voltage is specified at 3.5 V maximum at 90 µA drain current, so a 5 V logic-level gate drive will turn the device fully on. The recommended drive voltage for minimum Rds(on) is 10 V, but the device is characterised for operation down to 10 V gate drive.
Temperature range and thermal reality
The 6.9 W maximum power dissipation at case temperature is the hard limit — in a typical SOT223 layout on a 1 oz copper board with minimal copper area, the effective dissipation is closer to 2–3 W before the junction hits 125°C. At 8.5 A continuous drain current, the 600 mOhm Rds(on) produces about 43 W of conduction loss — that is well above the package's dissipation capability. The 8.5 A rating is a die-level limit; the practical continuous current in a real board is thermally limited to roughly 2 A at 25°C ambient, dropping further at elevated temperatures as Rds(on) increases.