IPN70R600P7SATMA1

Infineon Technologies · CoolMOS™ P7 Series

Infineon CoolMOS™ P7 series, IPN70R600P7SATMA1, N-channel MOSFET, 700 V drain-source, 8.5 A continuous drain at 25°C, 600 mOhm Rds(on) at 10 V gate drive, PG-SOT223 surface-mount package.

Infineon Technologies IPN70R600P7SATMA1
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[IN STOCK] In Stock: 60 pcs
$0.77/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPN70R600P7SATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ P7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.5A (Tc)
Power dissipation6.9W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3.5V @ 90µA
Rds on (Max) @ id, vgs600mOhm @ 1.8A, 10V
Gate charge (Qg) (Max) @ vgs10.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds364 pF @ 400 V

Technical details

IPN70R600P7SATMA1
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