Skip to main content
Infineon Technologies IPN70R450P7SATMA1
Infineon Technologies

Infineon IPN70R450P7SATMA1 CoolMOS P7 N-Ch MOSFET, 700V, 10A

MPNIPN70R450P7SATMA1
End of Life

Infineon CoolMOS™ P7 series, N-Channel MOSFET, 700 V drain-source voltage, 10 A continuous drain current, 450 mOhm on-resistance at 10 V gate drive, PG-SOT223 surface-mount package, -40°C to 150°C junction temperature.

$0.95Ref. price · indicative, final on quote
IPN70R450P7SATMA1 datasheet
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPN70R450P7SATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation7.1W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3.5V @ 120µA
Rds on (Max) @ id, vgs450mOhm @ 2.3A, 10V
Gate charge (Qg) (Max) @ vgs13.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds424 pF @ 400 V

Product details

700 V CoolMOS P7 in a SOT223 — thermal budget first

The IPN70R450P7SATMA1: The PG-SOT223 package limits power dissipation to 7.1 W at case temperature.

Switching losses and gate drive budget

Total gate charge is 13.1 nC at 10 V, with an input capacitance of 424 pF at 400 V drain-source. The 3.5 V typical gate threshold at 120 µA drain current means the device is fully enhanced at 10 V logic levels, but the 10 V drive voltage for rated Rds(on) is non-negotiable.

Package provenance and marking verification

The PG-SOT223 package marking should be laser-etched with Infineon's standard font and date-code format. Any lot with inconsistent laser depth or re-marked surface warrants decap X-ray verification.

Frequently asked questions

What is the closest functional second-source for IPN70R450P7SATMA1?

The Infineon IPD50R950CEAUMA1 is a CoolMOS CE series N-channel MOSFET in a similar voltage class (500 V vs 700 V), with higher on-resistance (950 mOhm) and lower current rating (4.3 A). It is not a pin-compatible drop-in — the package, Vds, and Rds(on) differ — but it covers a lower-power segment of the same application space.