Skip to main content
Infineon Technologies IPN70R1K2P7SATMA1

Infineon IPN70R1K2P7SATMA1 CoolMOS P7 N-Ch MOSFET, 700V 4.5A

MPNIPN70R1K2P7SATMA1
End of Life

Infineon CoolMOS™ P7, N-Channel MOSFET, 700 V Vdss, 4.5 A Id, 1.2 Ohm Rds(on) at 10 V, PG-SOT223 package, -40°C to 150°C junction temperature.

$0.81Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPN70R1K2P7SATMA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.5A (Tc)
Power dissipation6.3W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3.5V @ 40µA
Rds on (Max) @ id, vgs1.2Ohm @ 900mA, 10V
Gate charge (Qg) (Max) @ vgs4.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds174 pF @ 400 V

Product details

700 V CoolMOS P7 in a SOT223 — where it fits

The PG-SOT223 package keeps the footprint small. This is a 700 V part in a surface-mount SOT223, which puts it squarely into offline flyback auxiliary windings, PFC boost stages in lower-power supplies, and bias supplies for industrial and telecom equipment.

Switching losses and gate drive budget

The total gate charge is 4.8 nC at 10 V. The input capacitance is 174 pF at 400 V Vds.

Gate threshold and drive margin

The maximum gate threshold voltage is 3.5 V at 40 µA drain current. The gate-source absolute maximum is ±16 V.

It is ROHS3 compliant.

Frequently asked questions

What is the maximum drain current of the IPN70R1K2P7?

The continuous drain current is rated at 4.5 A at 25°C case temperature. This is the package-limited current at the case; the actual usable current in a given design is constrained by the 6.3 W power dissipation ceiling and the PCB thermal management.