Infineon CoolMOS™ CE, IPN60R3K4CEATMA1, N-Channel MOSFET, 600 V Vdss, 2.6 A Id, 3.4 Ohm Rds(on) @ 500 mA, 10 V, 4.6 nC Qg, PG-SOT223-3, -40 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CE |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2.6A (Tc) |
| Power dissipation | 5W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 3.5V @ 40µA |
| Rds on (Max) @ id, vgs | 3.4Ohm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 93 pF @ 100 V |
The IPN60R3K4CEATMA1: With a gate charge of only 4.6 nC at 10 V, the gate drive energy per switching cycle is low enough that a simple logic-level PWM output from a controller IC can drive it directly in many designs, saving a dedicated gate-driver BOM line.
The PG-SOT223-3 package has a large drain tab on the bottom. The 5 W dissipation ceiling requires a low-thermal-resistance path from the drain tab to a copper plane.
The on-resistance is specified at 10 V gate drive. The maximum gate-source voltage rating is ±20 V, so the part can be driven from a standard 12 V gate-drive rail or a logic-level PWM output stepped up through a bootstrap circuit.