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Infineon Technologies IPN60R2K0PFD7SATMA1
Infineon Technologies

Infineon IPN60R2K0PFD7SATMA1 CoolMOS PFD7 N-Ch 650V 3A

MPNIPN60R2K0PFD7SATMA1
End of Life

Infineon CoolMOS™PFD7, N-Channel MOSFET, 650 V drain-source, 3 A continuous drain at 25°C, 2 Ohm Rds(on) at 500 mA, 10 V, 3.8 nC gate charge, PG-SOT223-3-1 surface-mount package, -40°C to 150°C junction temperature.

$0.85Ref. price · indicative, final on quote
IPN60R2K0PFD7SATMA1 datasheet
PackagingTO-261-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPN60R2K0PFD7SATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™PFD7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation6W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-3
Vgs(th) (Max) @ id4.5V @ 30µA
Rds on (Max) @ id, vgs2Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs3.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds134 pF @ 400 V

Product details

650 V CoolMOS in a SOT223 — where it fits the bill

The Infineon IPN60R2K0PFD7SATMA1 is a 650 V N-channel CoolMOS PFD7 MOSFET in a PG-SOT223-3-1 surface-mount package. This is a part sized for auxiliary flyback supplies, bias rails in industrial PSUs, and LED lighting drivers where the board space is tight and the voltage rail sits above 400 V. The 150°C maximum junction temperature gives thermal headroom when the part is running in a warm enclosure alongside a transformer and electrolytic caps.

Rds(on) and the thermal reality in SOT223

The 2 Ohm Rds(on) is specified at 500 mA and 10 V gate drive. The 6 W package dissipation limit at case temperature constrains the average current. Input capacitance is 134 pF at 400 V drain-source. The gate threshold voltage max is 4.5 V at 30 µA.

Frequently asked questions

What is the Rds(on) of IPN60R2K0PFD7SATMA1?

The Rds(on) is specified at 10 V drive; a 5 V logic-level gate will turn the part on but the on-resistance is not guaranteed at that drive voltage.

Is IPN60R2K0PFD7SATMA1 RoHS compliant and lead-free?

No additional lead-free certification is listed beyond the ROHS3 status.