Infineon CoolMOS™PFD7, N-Channel MOSFET, 650 V drain-source, 3 A continuous drain at 25°C, 2 Ohm Rds(on) at 500 mA, 10 V, 3.8 nC gate charge, PG-SOT223-3-1 surface-mount package, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™PFD7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3A (Tc) |
| Power dissipation | 6W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-3 |
| Vgs(th) (Max) @ id | 4.5V @ 30µA |
| Rds on (Max) @ id, vgs | 2Ohm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 3.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 134 pF @ 400 V |
This is a part sized for auxiliary flyback supplies, bias rails in industrial PSUs, and LED lighting drivers where the board space is tight and the voltage rail sits above 400 V.
The 6 W package dissipation limit at case temperature constrains the average current. Input capacitance is 134 pF at 400 V drain-source. The gate threshold voltage max is 4.5 V at 30 µA.
The Rds(on) is specified at 10 V drive; a 5 V logic-level gate will turn the part on but the on-resistance is not guaranteed at that drive voltage.
No additional lead-free certification is listed beyond the ROHS3 status.