Infineon CoolMOS™ C7 series, N-Channel MOSFET, 650 V drain-source, 21 A continuous drain, 99 mOhm Rds(on) at 10 V gate drive, PG-VSON-4 package, surface mount, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ C7 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 21A (Tc) |
| Power dissipation | 128W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-PowerTSFN |
| Vgs(th) (Max) @ id | 4V @ 590µA |
| Rds on (Max) @ id, vgs | 99mOhm @ 5.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2140 pF @ 400 V |
The IPL65R099C7AUMA1: Gate charge is 45 nC at 10 V.
The PG-VSON-4 package (4-lead VSON) is a surface-mount, leadless design with an exposed pad for heat sinking. Input capacitance is 2140 pF at 400 V drain-source, which is typical for a 650 V device in this on-resistance class. The Miller plateau region should be checked against the driver's sink/source capability to avoid crossover conduction during hard switching.
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The IPL65R099C7AUMA1 shares the same CoolMOS C7 die and key ratings (650 V, 99 mOhm, 21 A) as the IPP65R099C7, but the package differs — PG-VSON-4 (surface-mount, leadless) versus TO-220 (through-hole). Verify the footprint and thermal pad compatibility before substituting.
The IPD50R950CEAUMA1 is a CoolMOS CE device with a 500 V drain-source rating and 950 mOhm on-resistance — significantly lower current capability (4.3 A) and a different voltage class. It is not a direct functional replacement for the 650 V, 21 A IPL65R099C7AUMA1.