Infineon CoolMOS™ P7, N-Channel MOSFET, 600 V Vdss, 10 A Id, 365 mOhm Rds(on) @ 10 V, 13 nC Qg, PG-VSON-4 (4-PowerTSFN), -40°C to 150°C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 46W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-PowerTSFN |
| Vgs(th) (Max) @ id | 4V @ 140µA |
| Rds on (Max) @ id, vgs | 365mOhm @ 2.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 555 pF @ 400 V |
The IPL60R365P7AUMA1: The PG-VSON-4 package (4-PowerTSFN) dissipates 46 W (Tc).
The threshold voltage range is 4 V maximum at 140 µA drain current, with a 10 V recommended gate drive for minimum Rds(on).
The PG-VSON-4 package has an exposed drain pad on the bottom — the part sits flat on the PCB pad with no leads to lift.
At 46 W maximum power dissipation, the PG-VSON-4 package relies on the PCB copper pour as the heatsink. For continuous operation above 2–3 A drain current at high switching frequency, a dedicated heatsink or a thermal via array to an inner-plane copper island is necessary to keep the junction below 150 °C.