Infineon Technologies · CoolMOS™ P6 Series
Infineon CoolMOS™ P6, N-Channel MOSFET, 600 V Vdss, 11.3 A Id, 360 mOhm Rds(on) @ 10 V, 22 nC Qg, 8-PowerTDFN (ThinPak 5x6), -40°C to 150°C junction.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | CoolMOS™ P6 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11.3A (Tc) |
| Power dissipation | 89.3W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4.5V @ 370µA |
| Rds on (Max) @ id, vgs | 360mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1010 pF @ 100 V |
Gate charge totals 22 nC at 10 V gate-source. Input capacitance Ciss is 1010 pF at 100 V drain-source.
The 5x6 mm footprint fits compact power stages where a DPAK or D2PAK would consume too much board area.
ROHS3 compliant, so no restrictions on use in new designs targeting European or global markets.
