600 V N-channel with 360 mOhm Rds(on)
The IPL60R360P6SATMA1: The 22 nC typical gate charge at 10 V gate-source supports fast switching.
Parametric deep-dive: switching and conduction
Gate charge totals 22 nC at 10 V gate-source. Input capacitance Ciss is 1010 pF at 100 V drain-source. Maximum power dissipation is 89.3 W at case temperature, but the real thermal limit depends on the PCB copper area under the 8-ThinPak (5x6) exposed pad.
Package and mounting: 8-PowerTDFN ThinPak
The 8-PowerTDFN package (also marked as 8-ThinPak 5x6) is a surface-mount DFN with an exposed thermal pad on the bottom. The 5x6 mm footprint fits compact power stages where a DPAK or D2PAK would consume too much board area.
Lifecycle and compliance
ROHS3 compliant, so no restrictions on use in new designs targeting European or global markets.
