Infineon CoolMOS™ C7 series, N-Channel MOSFET, 600 V drain-to-source, 13 A continuous drain current at 25°C, 185 mOhm max on-resistance at 10 V gate drive, 24 nC gate charge, PG-VSON-4 surface-mount package, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ C7 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Tc) |
| Power dissipation | 77W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-PowerTSFN |
| Vgs(th) (Max) @ id | 4V @ 260µA |
| Rds on (Max) @ id, vgs | 185mOhm @ 5.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1080 pF @ 400 V |
The IPL60R185C7AUMA1 is an Infineon CoolMOS™ C7 N-channel power MOSFET rated for 600 V drain-to-source with a continuous drain current of 13 A at 25°C case temperature.
Total gate charge is 24 nC at 10 V. Input capacitance Ciss is 1080 pF at 400 V drain bias.
The PG-VSON-4 package is rated for 77 W power dissipation at the case.
Both parts share the same CoolMOS C7 die with 600 V, 13 A, 185 mOhm ratings. The difference is the package: IPL60R185C7AUMA1 is in a PG-VSON-4 surface-mount package, while IPP60R185C7 is in a TO-220 through-hole package. The pinout and thermal pad layout are different, so the PCB footprint must match the package—they are not mechanically interchangeable without board rework.